Package structure

ABSTRACT

A package structure is provided. The package structure includes a waveguide, a passivation layer, and a reflector. The waveguide is over a substrate. The passivation layer is over the substrate and covers the waveguide. The reflector includes a metal layer and a semiconductor layer on the passivation layer. The metal layer and the first semiconductor layer are in contact with the passivation layer.

CROSS REFERENCE TO RELATED APPLICATIONS

This Application is a continuation application of application Ser. No. 17/197,788, filed on Mar. 10, 2021, which is a continuation application of application Ser. No. 16/874,219, filed on May 14, 2020, which is a divisional application of application Ser. No. 16/230,652, filed on Dec. 21, 2018, which claims the benefit of U.S. Provisional Application No. 62/752,683 filed on Oct. 30, 2018, and entitled “Package structure and method for forming the same”, the entirety of which is incorporated by reference herein.

BACKGROUND

Optical signals are used for secure, high-speed data transmission between two devices. In some applications, a device capable of optical data transmission includes at least one integrated circuit (IC) or a chip having an optical component for transmitting and/or receiving optical signals. Also, the device usually has one or more other optical or electronic components (e.g. transistors), a waveguide for controlling the propagation of the optical signals from one component to another, and a carrier, such as a substrate of a printed circuit board (PCB), on which the chip equipped with the optical component and the one or more other components are mounted. Various approaches for mounting a chip equipped with an optical component on a substrate have been studied.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It should be noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIGS. 1A-1B are cross-sectional representations of various stages of forming a first portion of a reflector, in accordance with some embodiments of the disclosure.

FIGS. 2A-2D are cross-sectional representations of various stages of forming a second portion of a reflector, in accordance with some embodiments of the disclosure.

FIGS. 3A-3D are cross-sectional representations of various stages of forming a reflector, in accordance with some embodiments of the disclosure.

FIGS. 4A-4D are cross-sectional representations of various stages of forming a package structure, in accordance with some embodiments of the disclosure.

FIG. 4E shows an application of the package structure of FIG. 4D, in accordance with some embodiments of the disclosure.

FIG. 5 is a cross-sectional representation of a modified reflector, in accordance with some embodiments of the disclosure.

FIG. 6 shows an application of a modified package structure, in accordance with some embodiments of the disclosure.

FIGS. 7A and 7B are perspective representations of a space in a package structure, in accordance with some embodiments of the disclosure.

FIGS. 8A-8D are cross-sectional representations of various stages of forming a modified first portion of a reflector, in accordance with some embodiments of the disclosure.

FIG. 8E is a cross-sectional representation of a modified reflector, in accordance with some embodiments of the disclosure.

FIG. 9 shows an application of a modified package structure, in accordance with some embodiments of the disclosure.

FIG. 10 is a cross-sectional representation of a modified reflector, in accordance with some embodiments of the disclosure.

FIG. 11 shows an application of a modified package structure, in accordance with some embodiments of the disclosure.

FIG. 12 is a cross-sectional representation of a modified reflector, in accordance with some embodiments of the disclosure.

FIG. 13 shows an application of a modified package structure, in accordance with some embodiments of the disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, or examples, for implementing different features of the subject matter provided. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Some variations of the embodiments are described. Throughout the various views and illustrative embodiments, like reference numbers are used to designate like elements. It should be understood that additional operations can be provided before, during, and after the method, and some of the operations described can be replaced or eliminated for other embodiments of the method.

Other features and processes may also be included. For example, testing structures may be included to aid in the verification testing of the three-dimensional (3D) packaging or 3D I C devices. The testing structures may include, for example, test pads formed in a redistribution layer or on a substrate that allows the testing of the 3D packaging or 3D IC, the use of probes and/or probe cards, and the like. The verification testing may be performed on intermediate structures as well as the final structure. Additionally, the structures and methods disclosed herein may be used in conjunction with testing methodologies that incorporate intermediate verification of known good dies to increase the yield and decrease costs.

Embodiments for forming a package structure are provided. The package structure may include a reflector, a waveguide and an optical component over a substrate, and an optical fiber is configured to be connected to the package structure. The reflector may include a metal layer, which may efficiently change directions of optical signals. As a result, a minimized and integrated package structure may be obtained.

FIGS. 1A-1B are cross-sectional representations of various stages of forming a first portion 100 a of a reflector, in accordance with some embodiments of the disclosure.

A first semiconductor layer 101 is provided, as shown in FIG. 1A in accordance with some embodiments. The first semiconductor layer 101 may include silicon. Alternatively or additionally, the first semiconductor layer 101 may include elementary semiconductor materials, compound semiconductor materials, and/or alloy semiconductor materials. Examples of the elementary semiconductor materials may include, but are not limited to, crystal silicon, polycrystalline silicon, amorphous silicon, germanium, and/or diamond. Examples of the compound semiconductor materials may include, but are not limited to, silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and/or indium antimonide. Examples of the alloy semiconductor materials may include, but are not limited to, SiGe, GaAsP, AlInAs, AlGaAs, GalnAs, GaInP, and/or GaInAsP.

Afterwards, openings 102 and 104 are formed in the first semiconductor layer 101, as shown in FIG. 1A in accordance with some embodiments. The openings 102 and 104 may be formed by a procedure including photolithography patterning and etching processes. The photolithography patterning processes may include photoresist coating (e.g., spin-on coating), soft baking, mask aligning, exposure, post-exposure baking, developing the photoresist, rinsing, drying (e.g., hard baking), and/or other applicable processes. The etching processes may include dry etching, wet etching, and/or other etching methods (e.g., reactive ion etching (RIE)).

After the openings 102 and 104 are formed, a dielectric layer 105 is formed over a surface of the first semiconductor layer 101, as shown in FIG. 1B in accordance with some embodiments. More specifically, the opening 102 is filled by the dielectric layer 105 such that a first alignment mark 107 is formed in the first semiconductor layer 101, which is configured to provide an alignment function in the subsequent processes. In addition, a portion of the dielectric layer 105 is formed in the opening 104 such that a reduced opening 104′ is obtained.

In some embodiments, the dielectric layer 105 is formed by a thermal oxidation process. In some embodiments, the dielectric layer 105 is formed by a deposition process, which may include a chemical vapor deposition (CVD) process, a high-density plasma chemical vapor deposition (HDPCVD) process, an atomic layer deposition (ALD) process, a physical vapor deposition (PVD) process, another applicable process, or a combination thereof. In some embodiments, the dielectric layer 105 is made of silicon oxide, silicon nitride, silicon oxynitride, or another applicable dielectric material. After the dielectric layer 105 is formed, the first portion 100 a of a reflector may be obtained.

FIGS. 2A-2D are cross-sectional representations of various stages of forming a second portion 200 of a reflector, in accordance with some embodiments of the disclosure.

A second semiconductor layer 201 is provided, as shown in FIG. 2A in accordance with some embodiments. The second semiconductor layer 201 may include silicon. Some materials used to form the second semiconductor layer 201 may be similar to, or the same as, those used to form the first semiconductor layer 101 described previously and are not repeated herein. It should be noted that, the second semiconductor layer 201 includes a protruding portion 203, which may be formed by a procedure including photolithography patterning and etching processes. The details of the photolithography patterning and etching processes may be similar to, or the same as, those described previously and are not repeated herein.

Next, an opening 202 is formed in the second semiconductor layer 201, as shown in FIG. 2B in accordance with some embodiments. Some processes used to form the opening 202 may be similar to, or the same as, those used to form the opening 102 described previously and are not repeated herein.

Afterwards, a dielectric layer 205 is formed over a surface of the second semiconductor layer 201, as shown in FIG. 2C in accordance with some embodiments. More specifically, the opening 202 is filled by the dielectric layer 205 such that a second alignment mark 207 is formed in the second semiconductor layer 201, which is configured to provide an alignment function in the subsequent processes. In addition, the protruding portion 203 is conformally covered by the dielectric layer 205. Some processes and materials used to form the dielectric layer 205 may be similar to, or the same as, those used to form the dielectric layer 105 described previously and are not repeated herein.

Then, a planarizing process is performed on the second semiconductor layer 201 to expose the protruding portion 203, as shown in FIG. 2D in accordance with some embodiments. In some embodiments, the planarizing process includes a grinding process, a chemical mechanical polishing (CMP) process, an etching process, another applicable process, or a combination thereof. After performing the planarizing process, the second portion 200 of a reflector may be obtained.

FIGS. 3A-3D are cross-sectional representations of various stages of forming a reflector 300 a, in accordance with some embodiments of the disclosure.

The second portion 200 of FIG. 2D is turned upside down and then is bonded to the first portion 100 a of FIG. 1B, as shown in FIG. 3A in accordance with some embodiments. In some embodiments, the dielectric layer 205 of the second portion 200 faces the dielectric layer 105 of the first portion 100 a, and the second portion 200 is bonded to the first portion 100 a with the second alignment mark 207 aligned with the first alignment mark 107. Moreover, in some embodiments, the protruding portion 203 is aligned with the reduced opening 104′ such that the reduced opening 104′ is covered by the protruding portion 203 of the second portion 200.

In some embodiments, the second portion 200 is bonded to the first portion 100 a by a thermal process. During the thermal process, the dielectric layer 205 combined with the dielectric layer 105 such that a combined dielectric layer 305 is formed between the first portion 100 a and the second portion 200, and the reduced opening 104′ is enclosed by the protruding portion 203 and the combined dielectric layer 305.

After the second portion 200 is bonded to the first portion 100 a, a planarization process is performed on the second semiconductor layer 201, as shown in FIG. 3B in accordance with some embodiments. It should be noted that, the planarization process is performed until a desired thickness of the second semiconductor layer 201 is obtained. The desired thickness of the second semiconductor layer 201 will be described in detail later. In some embodiments, the planarizing process includes a grinding process, a chemical mechanical polishing (CMP) process, an etching process, another applicable process, or a combination thereof.

After performing the planarizing process, the second semiconductor layer 201 is patterned to form an opening 308 in a patterned second semiconductor layer 201′, as shown in FIG. 3C in accordance with some embodiments. The opening 308 and the patterned second semiconductor layer 201′ may be formed by a procedure including one or more photolithography patterning and etching processes. The details of the photolithography patterning and etching processes may be similar to, or the same as, those described previously and are not repeated herein.

Afterwards, a metal layer 309 is formed lining the opening 308, and a reduced opening 308′ is obtained, as shown in FIG. 3D in accordance with some embodiments. As a result, a reflector 300 a is obtained. It should be noted that, before the metal layer 309 is formed, the opening 308 has a V-shaped cross-section with a tip pointing toward the combined dielectric layer 305. Therefore, the metal layer 309 lining the opening 308 also has a tip 309T pointing along a direction from the patterned second semiconductor layer 201′ to the first semiconductor layer 101. In some embodiments, the metal layer 309 is also V-shaped.

In some embodiments, the patterned second semiconductor layer 201′ has a first surface facing the combined dielectric layer 305 and a second surface opposite to the first surface, and an angle θ₁ is formed between an extension line of the second surface of the patterned second semiconductor layer 201′ and a tilted sidewall 309 s of the metal layer 309. It should be noted that, the tilted sidewall 309 s of the metal layer 309 is a portion of the interface between the metal layer 309 and the patterned second semiconductor layer 201′. In some embodiments, the angle θ₁ is an acute angle.

In some embodiments, the angle θ₁ is in a range from about 40 degrees to about 70 degrees. If the angle θ₁ is too small (i.e. smaller than 40 degrees) or too large (i.e. greater than 70 degrees), the optical signals may not be efficiently transmitted to the desired destinations after being reflected by the metal layer 309.

In addition, the tip 309T is intersected by the tilted sidewall 309 s and another tilted sidewall 309 s′ of the metal layer 309. In some embodiments, an angle θ₂ is formed between the tilted sidewall 309 s′ and an extension line of the second surface of the patterned second semiconductor layer 201′, which is opposite to the first surface facing the combined dielectric layer 305.

In some embodiments, the angle θ₂ is in a range from about 40 degrees to about 70 degrees, and the angle θ₂ between the tilted sidewall 309 s′ and the second surface of the patterned second semiconductor layer 201′ is substantially the same as, or similar to, the acute angle θ₁ between the tilted sidewall 309 s and the second surface of the patterned second semiconductor layer 201′. Therefore, the reduced opening 308′ may have a symmetric cross-section.

In some embodiments, the reduced opening 104′ has a central axis 104 c, as shown in FIG. 3D in accordance with some embodiments. Since there is no optical path designed to be turned by the tilted sidewall 309 s′ of the metal layer 309, the tip 309T of the metal layer 309 is shifted from the central axis 104 c. However, in some embodiments, an optical path is designed to be turned by the tilted sidewall 309 s′ of the metal layer 309. Thus, the tip 309T of the metal layer 309 is aligned with the central axis 104 c, which will be described in detail later.

In some embodiments, the metal layer 309 is formed by a procedure including deposition, photolithography patterning, and etching processes. The deposition processes may include CVD, metal organic CVD (MOCVD), sputtering, or electroplating. The details of the photolithography patterning and etching processes may be similar to, or the same as, those described previously and are not repeated herein. In some embodiments, the metal layer 309 is made of aluminum, aluminum/silicon/copper alloy, copper, titanium nitride, nickel, tungsten, metal silicide, or a combination thereof.

FIGS. 4A-4D are cross-sectional representations of various stages of forming a package structure 400 a, in accordance with some embodiments of the disclosure. The package structure 400 a may be a chip-on-wafer-on-substrate (CoWoS) package or another suitable package.

A package component 410 is provided, as shown in FIG. 4A in accordance with some embodiments. In some embodiments, the package component 410 is an interposer or another suitable component. The interposer may be substantially free of active elements, such as transistors, diodes, or other active elements. The interposer may include, or may be substantially free of passive elements, such as capacitors, resistors, inductors, or other passive elements.

In some embodiments, the package component 410 includes a substrate 401, an insulating layer 403, and a semiconductor layer 405. In some embodiments, the substrate 401 is a wafer, such as a silicon wafer, and the insulating layer 403 may be, for example, a buried oxide (BOX) layer, a silicon oxide layer, or the like. In addition, the semiconductor layer 405 may be silicon, another elementary semiconductor material, or a compound semiconductor, and the semiconductor layer 405 may be doped (e.g. with a P-type or an N-type dopant) or undoped.

In some embodiments, one or more through-substrate vias (TSVs) 408 are formed in the substrate 401. The TSVs 408 may be referred to as through-silicon vias. In some embodiments, each of the TSVs 408 includes an insulating layer 340 and a conductive feature 409 surrounded by the insulating layer 340. The conductive features 409 are separated from the substrate 401 by the insulating layer 340. In some embodiments, the conductive features 409 include copper (Cu), aluminum (Al), nickel (Ni), platinum (Pt), lead-free solder (e.g., SnAg, SnCu, SnAgCu), another suitable conductive material, or a combination thereof.

Moreover, in some embodiments, conductive features 411 are formed over a surface of the substrate 401, which is opposite to the surface covered by the insulating layer 403, and a passivation layer 413 is formed over the conductive features 411. The conductive features 411 may be partially exposed by openings 412 in the passivation layer 413, and the conductive features 411 may be in electrical contact with the TSVs 408. In addition, the conductive features 411 may be conductive pads or conductive lines, and the passivation layer 413 may be a multi-layer structure.

An optical component 423 and an electronic component 425 are formed over the semiconductor layer 405 of the package component 410, as shown in FIG. 4A in accordance with some embodiments. In some embodiments, the optical component 423 includes a light emitting device such as a light emitting diode or a laser, a light detecting device such as a photo-sensor, an optical modulator, an optical coupler, another applicable component, or a combination thereof.

In some embodiments, the electronic component 425 includes a transistor, a resistor, a capacitor, a diode, another applicable component, or a combination thereof. Although only one optical component 423 and one electronic component 425 are shown in FIG. 4A, the scope of the disclosure is not limited thereto. For example, there can be more than one optical component 423 and/or electronic component 425.

A waveguide 421 a is formed over the semiconductor layer 405 of the package component 410 and adjacent to the optical component 423, as shown in FIG. 4A in accordance with some embodiments. The waveguide 421 a may include a core region and a cladding layer surrounding the core region, the core region and the cladding layer have different reflective coefficients and are arranged to allow an optical signal of a predetermined wavelength to travel within the core region by total internal reflection.

In some embodiments, the core region of the waveguide 421 a includes a semiconductor material such as silicon, a polymer material, a dielectric material such as silicon nitride, or a combination thereof, and the cladding layer of the waveguide 421 a includes a dielectric material such as silicon dioxide (SiO₂), silicon carbide (SiC), carbon nitride (CN), silicon oxynitride (SiON), silicon nitride (SiN), or another applicable material.

In some embodiments, an interconnect structure 430 is formed over the waveguide 421 a, the optical component 423 and the electronic component 425. The interconnect structure 430 includes one or more redistribution layers and one or more passivation layers. For example, the interconnect structure 430 includes conductive layers 429 and conductive vias 427 in a passivation layer 431.

The passivation layer 431 may include multiple sub-layers. In some embodiments, the passivation layer 431 in the interconnect structure 430 is made of polybenzoxazole (PBO), benzocyclobutene (BCB), silicone, acrylates, siloxane, another suitable material, or a combination thereof. In some embodiments, the passivation layer 431 in the interconnect structure 430 is made of non-organic materials. The non-organic materials includes silicon oxide, un-doped silicate glass, silicon oxynitride, solder resist (SR), silicon nitride, silicon carbide, hexamethyldisilazane (HMDS), another suitable material, or a combination thereof.

In some embodiments, the conductive layers 429 and the conductive vias 427 in the interconnect structure 430 are made of metal materials. The metal materials include copper (Cu), Cu alloy, aluminum (Al), Al alloy, tungsten (W), W alloy, titanium (Ti), Ti alloy, tantalum (Ta), Ta alloy, another applicable material, or a combination thereof.

In addition, under-bump metallurgy (UBM) elements 435 are formed over the passivation layer 431, a passivation layer 437 is formed over the UBM elements 435, and each of the UBM elements 435 is partially exposed by the passivation layer 437, as shown in FIG. 4A in accordance with some embodiments. The UBM elements 437 may be made of titanium, titanium nitride, tantalum, tantalum nitride, tungsten, titanium tungsten, nickel, gold, chrome, copper, copper alloy, another suitable material, or a combination thereof. Some materials used to form the passivation layer 437 may be similar to, or the same as, those used to form the passivation layer 431 described previously and are not repeated herein.

In some embodiments, a chip (integrated circuit die) 440 is bonded to the interconnect structure 430 through conductive features 439, and the conductive features 439 are surrounded by a molding material 441. The conductive features 439 may be conductive bumps or other conductive elements, and the molding material 441 may include liquid epoxy, deformable gel, silicon rubber, another suitable material, or a combination thereof.

In some embodiments, the molding material 441 includes an epoxy-based resin with fillers dispersed therein. The fillers may include insulating fibers, insulating particles, other suitable elements, or a combination thereof. In some embodiments, a dispensing process is performed to form the molding material 441.

In some embodiments, the chip 440 is sawed from a wafer, and may be a “known-good-die”. In some embodiments, the chip 440 is a logic die, a memory die, or another applicable type of die. In some embodiments, the chip 440 includes a semiconductor substrate, passivation layer(s), and conductive feature(s).

In some embodiments, the chip 441 is disposed directly over the electronic component 425 and the optical component 423, and a portion of the passivation layer 431 is removed such that an opening 432 is formed adjacent to the optical component 423, as shown in FIG. 4A in accordance with some embodiments.

More specifically, in some embodiments, the waveguide 421 a remains covered by the passivation layer 431 after the opening 432 is formed, and a portion of the opening 432 is directly above the waveguide 421 a. In some embodiments, a portion of the passivation layer 431 directly above the waveguide 421 a has a first thickness T₁, the waveguide 421 a has a second thickness T₂, and a ratio (T₁/T₂) of the first thickness T₁ to the second thickness T₂ is smaller than about 0.5.

If the ratio (T₁/T₂) is too large (i.e. greater than 0.5), the optical signals may not be efficiently transmitted (vibrated along a vertical direction) to the waveguide 421 a. In some embodiments, the waveguide 421 a is partially exposed by the opening 432.

Afterwards, the reflector 300 a shown in FIG. 3D is flipped upside down and then is bonded to the passivation layer 431, and the metal layer 309 and the patterned second semiconductor layer 201′ are disposed in the opening 432, as shown in FIG. 4B in accordance with some embodiments. In some embodiments, the reflector 300 a is bonded to the passivation layer 431 by an adhesive layer 433, and the tilted sidewall 309 s faces the waveguide 421 a.

After the reflector 300 a is bonded to the passivation layer 431, the reduced opening 308′ is enclosed by the metal layer 309 and the passivation layer 431 such that a space A with triangular cross-section is formed, and the metal layer 309 has an inversed V-shaped cross-section. In some embodiments, the opening 432 is not entirely filled by the reflector 300 a, such that a gap is formed between the patterned second semiconductor layer 201′ and the passivation layer 431, such as gaps 432 a and 432 b.

A molding material 445 is formed surrounding the reflector 300 a and the chip 440, and a planarizing process is performed on the reflector 300 a and the chip 440 such that a planarized reflector 300 a′ and a planarized chip 440′ are formed, as shown in FIG. 4C in accordance with some embodiments. More specifically, the reduced opening 104′ is reopened from the side opposite to the side facing the passivation layer 431. Some materials used to form the molding material 445 may be similar to, or the same as, those used to form the molding material 441 described previously and are not repeated herein.

After the planarizing process is performed, the package component 410 is bonded to a substrate 451 through bumps 455, as shown in FIG. 4D in accordance with some embodiments. In some embodiments, the substrate 451 is a printed circuit board (PCB), another package structure, or another suitable substrate. The bumps 455 are electrically connected to conductive features 453, such as conductive pads, over the substrate 451. In some embodiments, the conductive features 453 and the bumps 455 are substantially aligned to each other. As a result, a package structure 400 a is obtained.

FIG. 4E shows an application of the package structure 400 a of FIG. 4D, in accordance with some embodiments of the disclosure.

In some embodiments, the package structure 400 a is used for connecting with an optical fiber 500, which includes a core region 501 and a cladding layer 503 surrounding the core region 501, as shown in FIG. 4E in accordance with some embodiments. Some materials used to form the core region 501 and the cladding layer 503 may be similar to, or the same as, those used to form the core region and the cladding layer of the waveguide 421 a described previously and are not repeated herein. In some embodiments, the core region 501 of the optical fiber 500 is inserted into the reduced opening 104′ (as shown by the arrow pointing downward), and an optical path between the optical fiber 500 and the waveguide 421 a is formed.

More specifically, optical signals may be emitted from the optical fiber 500, reflected (turned) by the tilted sidewall 309 s of the metal layer 309, transmitted by the patterned second semiconductor layer 201′ and the waveguide 421 a, and then, received by the optical component 423. Alternatively, optical signals may be emitted from the optical component 423, transmitted by the waveguide 421 a and the patterned second semiconductor layer 201′, reflected (turned) by the tilted sidewall 309 s of the metal layer 309, and then, received by the optical fiber 500.

In some embodiments, the patterned second semiconductor layer 201′ is transparent. Therefore, optical signals may be transmitted through the patterned second semiconductor layer 201′. In addition, optical signals may be transformed to electronic signals and transmitted to the planarized chip 440′ through the interconnect structure 430. Alternatively, optical signals may be transformed from electronic signals, which is sent out from the planarized chip 440′ through the interconnect structure 430.

In some embodiments, the portion of the patterned second semiconductor layer 201′ under the combined dielectric layer has a third thickness T₃, and the reduced opening 104′ has a width W, the width W is greater than the third thickness T₃, and the third thickness T₃ is greater than the second thickness T₂ of the waveguide 421 a. It should be noted that the difference between the width W and the second thickness T₂ of the waveguide 421 a is large. Therefore, optical signals may be easily and efficiently transmitted between the large-sized reduced opening 104′ and the small-sized waveguide 421 a.

In some embodiments, the width W is in a range from about 3 μm to about 70 μm. In some embodiments, the third thickness T₃ is in a range from about 3 μm to about 5 μm. In some embodiments, the second thickness T₂ of the waveguide 421 a is in a range from about 150 μm to about 250 μm. In addition, a fourth thickness T₄ of the portion of the combined dielectric layer 305 surrounding the reduced opening 104′ may be in a range from about 80 μm to about 250 μm.

Embodiments of the package structure 400 a includes the planarized reflector 300 a′, which allow the optical fiber 500 to be connected to the package structure 400 a by a self-aligned process. The planarized reflector 300 a′ includes the metal layer 309, which can change directions of optical signals. Therefore, the optical path in the package structure may not be limited by the guard rings or seal rings in the package structure 400 a.

Moreover, optical signals can be easily and efficiently transmitted between two regions having a large size difference by the planarized reflector 300 a′. As a result, the size of the package structure 400 a may be minimized, which allow more components to be integrated into a given area in the package structure 400 a. Furthermore, the package structure 400 a may be a chip-on-wafer-on-substrate (CoWoS) package. Thus, a wafer-level test may be performed on the package structure 400 a. In addition, the package structure 400 a is compatible with a system of dense wavelength division multiplexing (DWDM).

FIG. 5 is a cross-sectional representation of a modified reflector 300 b, in accordance with some embodiments of the disclosure. The modified reflector 300 b is similar to the reflector 300 a of FIG. 3D, and the difference between FIG. 5 and FIG. 3D is that the tip 309T of the metal layer 309 is aligned with the central axis 104 c of the reduced opening 104′ in FIG. 5.

FIG. 6 shows an application of a modified package structure 400 b, in accordance with some embodiments of the disclosure. FIG. 7A is a perspective representation of the space A in the package structure 400 b, in accordance with some embodiments of the disclosure. FIG. 7B is a perspective representation of the space A in the package structure 400 b, in accordance with some embodiments of the disclosure.

Some processes used to form the modified package structure 400 b may be similar to, or the same as, those used to form the package structure 400 a described previously and are not repeated herein. The difference between FIG. 6 and FIG. 4E is that the planarized reflector 300 a′ is replaced by the planarized reflector 300 b′, and there is another waveguide 421 b disposed in FIG. 6. The planarized reflector 300 b′ is formed by the modified reflector 300 b shown in FIG. 5.

In some embodiments, there are two waveguides 421 a and 421 b disposed at two opposite sides of the metal layer 309. Since the tip 309T of the metal layer 309 is aligned with the central axis 104 c of the reduced opening 104′, optical signals emitted from the optical fiber 500 may be reflected by the tip 309T of the metal layer 309, and split into two beams of optical signals, which may be respectively transmitted to the waveguide 421 a and the waveguide 421 b. Alternatively, optical signals emitted from the waveguides 421 a and 421 b may be combined and reflected by the tip 309T of the metal layer 309, and then transmitted to the optical fiber 500.

In some embodiments, the space A enclosed by the metal layer 309 and the passivation layer 431 is a triangular prism A₁, as shown in FIG. 7A. More specifically, one of the rectangle surfaces of the triangular prism A₁ faces the waveguides 421 a and 421 b. In these cases, optical signals may be split into two beams, or combined by two beams.

In some embodiments, the space A enclosed by the metal layer 309 and the passivation layer 431 is a square pyramid A₂, as shown in FIG. 7B. More specifically, the square surface of the square pyramid A₂ faces the waveguides 421 a and 421 b. In these cases, the number of the waveguides disposed in the package structure may be increased to four, and each of the waveguides is disposed facing each remaining surfaces of the square pyramid A₂. Moreover, in these cases, optical signals may be split into four beams, or combined by four beams. Embodiments of the package structure 400 b with the triangular prism A₁ or the square pyramid A₂ give an advantage in high bandwidth applications since the signals may be increased up to 4 times.

FIGS. 8A-8D are cross-sectional representations of various stages of forming a modified first portion 100 b of a reflector, in accordance with some embodiments of the disclosure.

A first semiconductor layer 101 is provided, as shown in FIG. 8A in accordance with some embodiments. Some materials used to form the first semiconductor layer 101 of FIG. 8A may be similar to, or the same as, those used to form the first semiconductor layer 101 of FIG. 1A described previously and are not repeated herein. It should be noted that, the first semiconductor layer 101 includes a protruding portion 103, which may be formed by a procedure including photolithography patterning and etching processes. The details of the photolithography patterning and etching processes may be similar to, or the same as, those described previously and are not repeated herein.

Afterwards, openings 102, 106 and 108 are formed in the first semiconductor layer 101, as shown in FIG. 8B in accordance with some embodiments. Some processes used to form the openings 102, 106 and 108 may be similar to, or the same as, those used to form the opening 102 of FIG. 1A described previously and are not repeated herein. It should be noted that the openings 106 and 108 are formed at two opposite sides of the protruding portion 103.

After the openings 102, 106 and 108 are formed, a dielectric layer 105 is formed over a surface of the first semiconductor layer 101, as shown in FIG. 8C in accordance with some embodiments. Moreover, the opening 102 is filled by the dielectric layer 105 such that a first alignment mark 107 is formed in the first semiconductor layer 101, which is configured to provide an alignment function in the subsequent processes. In addition, the openings 106 and 108 are filled by the dielectric layer 105. Some processes and materials used to form the dielectric layer 105 of FIG. 8C may be similar to, or the same as, those used to form the dielectric layer 105 of FIG. 1B described previously and are not repeated herein.

Then, a planarizing process is performed on the first semiconductor layer 101 to expose the protruding portion 103, as shown in FIG. 8D in accordance with some embodiments. In some embodiments, the planarizing process includes a grinding process, a chemical mechanical polishing (CMP) process, an etching process, another applicable process, or a combination thereof. After performing the planarizing process, the modified first portion 100 b of a reflector may be obtained.

FIG. 8E is a cross-sectional representation of a modified reflector 300 c, in accordance with some embodiments of the disclosure. The modified reflector 300 c is formed by bonding the second portion 200 of FIG. 2D to the first portion 100 b of FIG. 8D, and a procedure similar to the steps shown in FIGS. 3A-3D is performed to obtain the modified reflector 300 c. The modified reflector 300 c is similar to the modified reflector 300 b of FIG. 5, and the difference between FIG. 8E and FIG. 5 is that the reduced opening 104′ is not formed in FIG. 8E.

FIG. 9 shows an application of a modified package structure 400 c, in accordance with some embodiments of the disclosure. Some processes used to form the modified package structure 400 c may be similar to, or the same as, those used to form the package structure 400 a and are not repeated herein.

In addition, the difference between FIG. 9 and FIG. 6 is that the planarized reflector 300 b′ is replaced by the planarized reflector 300 c′ in FIG. 9. The planarized reflector 300 c′ is formed by the modified reflector 300 c shown in FIG. 8E.

The first semiconductor layer 101 of the planarized reflector 300 c′ may be divided into an inner portion 101 a and an outer portion 101 b, which may be separated by a portion of the combined dielectric layer 305. In some embodiments, the core region 501 of the optical fiber 500 is connected to the inner portion 101 a by a self-aligned process, and optical paths between the optical fiber 500 and the waveguides 421 a and 421 b are formed.

More specifically, optical signals may be emitted from the optical fiber 500, transmitted through the inner portion 101 a, reflected by the tip 309T of the metal layer 309, transmitted by the patterned second semiconductor layer 201′ and the waveguide 421 a/421 b, and then, received by the optical component 423. Alternatively, optical signals may be emitted from the optical component 423, transmitted by the waveguide 421 a/421 b and the patterned second semiconductor layer 201′, reflected by the tip 309T of the metal layer 309, transmitted by the inner portion 101 a, and then, received by the optical fiber 500.

In some embodiments, the inner portion 101 a and the patterned second semiconductor layer 201′ are transparent. Therefore, optical signals may be transmitted through the inner portion 101 a and the patterned second semiconductor layer 201′.

FIG. 10 is a cross-sectional representation of a modified reflector 300 d, in accordance with some embodiments of the disclosure. The modified reflector 300 d is similar to the modified reflector 300 b of FIG. 5, and the difference between FIG. 10 and FIG. 5 is that a polymer layer 311 is formed in FIG. 10.

It should be noted that, the polymer layer 311 may be formed over the patterned second semiconductor layer 201′, the reduced opening 308′ of FIG. 5 may be entirely filled by the polymer layer 311, and the metal layer 309 may be sandwiched between the patterned second semiconductor layer 201′ and the polymer layer 311. In some embodiments, the polymer layer 311 has a portion protruding toward the patterned second semiconductor layer 201′, and the protruding portion has a triangular cross-section. In some embodiments, the protruding portion is a triangular prism or a square pyramid in perspective representations, as shown in FIGS. 7A and 7B in accordance with some embodiments.

In some embodiments, the polymer layer 311 is formed by a procedure including dispensing, photolithography patterning and etching processes. In some embodiments, the polymer layer 311 is made of polybenzoxazole (PBO), liquid epoxy, deformable gel, silicon rubber, epoxy-based resin, another applicable polymer material, or a combination thereof.

FIG. 11 shows an application of a modified package structure 400 d, in accordance with some embodiments of the disclosure. Some processes used to form the modified package structure 400 d may be similar to, or the same as, those used to form the package structure 400 a described previously and are not repeated herein.

In addition, the difference between FIG. 11 and FIG. 6 is that the opening 432 (shown in FIG. 4A, not shown in FIG. 11) for bonding the reflector 300 d is formed deeper, and the planarized reflector 300 b′ is replaced by the planarized reflector 300 d′ in FIG. 11. The planarized reflector 300 d′ is formed by the modified reflector 300 d shown in FIG. 10.

More specifically, the opening 432 for the reflector 300 d is formed deeper such that the interconnect structure 430 is penetrated by the opening 432, and a portion of the package component 410 is removed. As a result, the bottom surface of the planarized reflector 300 d′ (i.e. the bottom surface of the polymer layer 311) is lower than the top surface of the package component 410.

In some embodiments, the polymer layer 311 is configured to be a buffer layer between the planarized reflector 300 d′ and the package component 410, so that damage to the elements in the package component 410 may be prevented. In addition, the metal layer 309 of FIG. 11 is located lower than the metal layer 309 of FIG. 6, in accordance with some embodiments, thereby ensuring that optical signals can transmit through the waveguides 421 a and 421 b.

FIG. 12 is a cross-sectional representation of a modified reflector 300 e, in accordance with some embodiments of the disclosure. The modified reflector 300 e is similar to the modified reflector 300 c of FIG. 8E, and the difference between FIG. 12 and FIG. 8E is that a polymer layer 311 is formed in FIG. 12. Some materials used to form the polymer layer 311 of FIG. 12 may be similar to, or the same as, those used to form the polymer layer 311 of FIG. 10 described previously and are not repeated herein.

FIG. 13 shows an application of a modified package structure 400 e, in accordance with some embodiments of the disclosure. Some processes used to form the modified package structure 400 e may be similar to, or the same as, those used to form the package structure 400 a described previously and are not repeated herein.

In addition, the difference between FIG. 13 and FIG. 9 is that the opening 432 (shown in FIG. 4A, not shown in FIG. 13) for bonding the reflector 300 e is formed deeper, and the planarized reflector 300 c′ is replaced by the planarized reflector 300 e′ in FIG. 13. The planarized reflector 300 e′ is formed by the modified reflector 300 e shown in FIG. 12.

In some embodiments, the polymer layer 311 is configured to be a buffer layer between the planarized reflector 300 e′ and the package component 410, so that damage to the elements in the package component 410 may be prevented. In addition, the metal layer 309 of FIG. 13 is located lower than the metal layer 309 of FIG. 9, in accordance with some embodiments, thereby ensuring that optical signals can transmit through the waveguides 421 a and 421 b.

Embodiments of the package structures 400 a, 400 b, 400 c, 400 d and 400 e include the planarized reflectors 300 a′, 300 b′, 300 c′, 300 d′ and 300 e′, which allow the optical fiber 500 to be connected to the package structures 400 a-400 e by a self-aligned process, and optical paths may be formed between the optical fiber 500 and the waveguides 421 a and 421 b. Moreover, since each of the planarized reflectors 300 a′-300 e′ has a metal layer 309 with an inversed V-shaped cross-section, optical signals may be efficiently reflected by the tilted sidewalls 309 s and 309 s′ of the inversed V-shaped cross-section. As a result, the optical paths may not be limited by the components in the package structures 400 a-400 e, the space in the package structures 400 a-400 e may be effectively utilized, and the overall sizes of the package structures 400 a-400 e may be reduced. Furthermore, optical signals may be split up to four beams, which is advantageous for high bandwidth applications. In addition, by integrating the planarized reflectors 300 a′-300 e′ into the package structures 400 a-400 e, optical signals may be easily and efficiently transmitted between two regions having a large size difference. As a result, the size of the package structures 400 a-400 e may be minimized, which allow more components to be integrated into a given area in the package structures 400 a-400 e.

In some embodiments, a package structure is provided. The package structure includes a waveguide, a passivation layer, and a reflector. The waveguide is over a substrate. The passivation layer is over the substrate and covers the waveguide. The reflector includes a metal layer and a semiconductor layer on the passivation layer. The metal layer and the first semiconductor layer are in contact with the passivation layer.

In some embodiments, a package structure is provided. The package structure includes a waveguide, a passivation layer, and a reflector. The waveguide is over a substrate. The passivation layer is over the substrate and covers the waveguide. The reflector includes a metal layer and a first semiconductor layer. The first semiconductor layer includes a first opening that overlaps the metal layer.

In some embodiments, a package structure is provided. The package structure includes a first dielectric layer, a second dielectric layer, a combined dielectric layer, and a reflector. The first dielectric layer is on a first semiconductor layer. The dielectric layer is on a second semiconductor layer. The combined dielectric layer includes the first dielectric layer and the second dielectric layer. The reflector includes a metal layer on sidewalls of a portion of the first semiconductor layer. The portion of the first semiconductor layer is V-shaped.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. 

What is claimed is:
 1. A package structure, comprising: a waveguide over a substrate; a passivation layer over the substrate and covering the waveguide; and a reflector comprising a metal layer and a semiconductor layer on the passivation layer, wherein the metal layer and the semiconductor layer are in contact with the passivation layer.
 2. The package structure as claimed in claim 1, wherein a portion of the semiconductor layer is disposed between the metal layer and the waveguide.
 3. The package structure as claimed in claim 1, wherein the reflector further comprises an inner portion, an outer portion, and a dielectric layer, and the inner portion and the outer portion are separated from each other by the dielectric layer.
 4. The package structure as claimed in claim 3, wherein the inner portion overlaps the metal layer.
 5. The package structure as claimed in claim 3, wherein the inner portion is in contact with the semiconductor layer, and the outer portion is not in contact with the semiconductor layer.
 6. A package structure, comprising: a waveguide over a substrate; a passivation layer over the substrate and covering the waveguide; and a reflector comprising a metal layer and a first semiconductor layer, wherein the first semiconductor layer comprises a first opening that overlaps the metal layer.
 7. The package structure as claimed in claim 6, wherein a tip of the metal layer is shifted from a central axis of the first opening.
 8. The package structure as claimed in claim 6, wherein a tip of the metal layer is aligned with a central axis of the first opening.
 9. The package structure as claimed in claim 6, wherein the waveguide does not overlap the first opening.
 10. The package structure as claimed in claim 6, further comprising a chip on the passivation layer, wherein a top surface of the chip is leveled with a top surface of the first semiconductor layer.
 11. The package structure as claimed in claim 6, wherein the reflector further comprises a second semiconductor layer disposed between the first semiconductor layer and the metal layer.
 12. The package structure as claimed in claim 11, wherein the second semiconductor layer comprises a second opening, and a width of the second opening is different from a width of the first opening.
 13. The package structure as claimed in claim 12, wherein the width of the second opening is greater than the width of the first opening.
 14. The package structure as claimed in claim 12, wherein a portion of the waveguide overlaps the second opening.
 15. A package structure, comprising: a first dielectric layer on a first semiconductor layer; a second dielectric layer on a second semiconductor layer; a combined dielectric layer comprising the first dielectric layer and the second dielectric layer; and a reflector comprising a metal layer on sidewalls of a portion of the first semiconductor layer, wherein the portion of the first semiconductor layer is V-shaped.
 16. The package structure as claimed in claim 15, wherein a width of the first semiconductor layer is less than a width of the second semiconductor layer.
 17. The package structure as claimed in claim 15, wherein the second semiconductor layer comprises a first opening and a second opening, a width of the first opening is different from a width of the second opening, and the metal layer overlaps the second opening.
 18. The package structure as claimed in claim 17, wherein the first opening is completely filled with the second dielectric layer, and the second opening is partially filled with the second dielectric layer.
 19. The package structure as claimed in claim 17, wherein a tip of the metal layer is shifted from a central axis of the second opening.
 20. The package structure as claimed in claim 18, further comprising a protruding portion on the first semiconductor layer, and the second opening is covered by the protruding portion. 